HT48F06E/HT48F10E/HT48F30E -- I/O Flash Type MCU with EEPROM

General Description

The HT48F06E, HT48F10E and HT48F30E are 8-bit high-performance, RISC architecture microcontroller devices specifically designed for multiple I/O control product applications. Device flexibility is enhanced with their internal special features such as power-down and wake-up functions, oscillator options, buzzer driver, etc. These features combine to ensure applications require a minimum of external components and therefore reduce overall product costs.

Having the advantages of low-power consumption, high-performance, I/O flexibility as well as low-cost, these devices have the versatility to suit a wide range of application possibilities such as industrial control, consumer products, subsystem controllers, etc. Many features are common to all devices, however, they differ in areas such as I/O pin count, Program Memory and Data Memory capacity, package types, etc.

All devices utilise a Flash type Program Memory, and therefore have multi-programmable capabilities offering the advantages of easy and efficient program updates. The non-volatile internal EEPROM also offers the capability of storing information such as product part numbers, calibration data and other specific product information. etc. The devices are fully supported by the Holtek range of fully functional development and programming tools, providing a means for fast and efficient product development cycles.

Features

  • Operating voltage:
    fSYS=4MHz: 2.2V~5.5V
    fSYS=8MHz: 3.3V~5.5V
    fSYS=12MHz: 4.5V~5.5V
  • Multi-programmable Flash Type Program Memory
  • EEPROM data memory: 128x8
  • From 13 to 23 Bidirectional I/O with Pull-high Options
  • External Interrupt Input
  • Full Timer Functions with Prescaler and Interrupt
  • Timer External Input
  • Crystal and RC System Oscillator
  • Watchdog Timer Function
  • PFD/Buzzer Driver Outputs
  • Power Down and Wake-up Feature for Power Saving
    Operation
  • Up to 0.5µs instruction cycle with 8MHz system clock at VDD=5V
  • Bit Manipulation Instructions
  • Table Read Function
  • 63 Powerful Instructions
  • All Instructions executed in 1 or 2 Machine Cycles
  • Low Voltage Reset Function
  • Flash program memory can be re-programmed up to
    100,000 times
  • Flash program memory data retention > 10 years
  • EEPROM data memory can be re-programmed up to
    1,000,000 times
  • EEPROM data memory data retention > 10 years
  • ISP (In-System Programming) interface
  • Full Suite of Supported Hardware and Software
  • Tools Available

Technical Document

Other Information